Part Number : | RN1106ACT(TPL3) |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | TRANS PREBIAS NPN 0.1W CST3 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4369 pcs |
Datasheets | RN1106ACT(TPL3).pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | CST3 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 100mW |
Packaging | Original-Reel® |
Package / Case | SC-101, SOT-883 |
Other Names | RN1106ACT(TPL3)DKR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 80mA 100mW Surface Mount CST3 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 80mA |