| Part Number : | RN1130MFV,L3F |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | TRANS PREBIAS NPN 0.15W VESM |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 1062775 pcs |
| Datasheets | RN1130MFV,L3F.pdf |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Transistor Type | NPN - Pre-Biased |
| Supplier Device Package | VESM |
| Series | - |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Resistor - Base (R1) | 100 kOhms |
| Power - Max | 150mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Other Names | RN1130MFV(TL3,T) RN1130MFV(TL3T)TR RN1130MFV(TL3T)TR-ND RN1130MFV,L3F(B RN1130MFV,L3F(T RN1130MFVL3F RN1130MFVL3F-ND RN1130MFVL3FTR RN1130MFVTL3T |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 16 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 250MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
Toshiba Semiconductor and Storage
