Part Number : | RQ3E100GNTB |
---|---|
Manufacturer/Brand : | LAPIS Semiconductor |
Description : | MOSFET N-CH 30V 10A 8-HSMT |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 228901 pcs |
Datasheets | 1.RQ3E100GNTB.pdf2.RQ3E100GNTB.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-HSMT (3.2x3) |
Series | - |
Rds On (Max) @ Id, Vgs | 11.7 mOhm @ 10A, 10V |
Power Dissipation (Max) | 2W (Ta), 15W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 8-PowerVDFN |
Other Names | RQ3E100GNTBTR |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 40 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 7.9nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 10A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3) |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |