| Part Number : | RT1C060UNTR |
|---|---|
| Manufacturer/Brand : | LAPIS Semiconductor |
| Description : | MOSFET N-CH 20V 6A TSST8 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 197040 pcs |
| Datasheets | RT1C060UNTR.pdf |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSST |
| Series | - |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 6A, 4.5V |
| Power Dissipation (Max) | 650mW (Ta) |
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SMD, Flat Lead |
| Other Names | RT1C060UNCT RT1C060UNTRCT RT1C060UNTRCT-ND |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Detailed Description | N-Channel 20V 6A (Ta) 650mW (Ta) Surface Mount 8-TSST |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
LAPIS Semiconductor
