| Part Number : | RW1A030APT2CR |
|---|---|
| Manufacturer/Brand : | LAPIS Semiconductor |
| Description : | MOSFET P-CH 12V 3A WEMT6 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 234169 pcs |
| Datasheets | 1.RW1A030APT2CR.pdf2.RW1A030APT2CR.pdf3.RW1A030APT2CR.pdf4.RW1A030APT2CR.pdf |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Vgs (Max) | -8V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | 6-WEMT |
| Series | - |
| Rds On (Max) @ Id, Vgs | 42 mOhm @ 3A, 4.5V |
| Power Dissipation (Max) | 700mW (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Other Names | RW1A030APT2CR-ND RW1A030APT2CRTR |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 6V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Detailed Description | P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
LAPIS Semiconductor
