| Part Number : | SCT3120ALGC11 |
|---|---|
| Manufacturer/Brand : | LAPIS Semiconductor |
| Description : | MOSFET NCH 650V 21A TO247N |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 5101 pcs |
| Datasheets | 1.SCT3120ALGC11.pdf2.SCT3120ALGC11.pdf |
| Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
| Vgs (Max) | +22V, -4V |
| Technology | SiCFET (Silicon Carbide) |
| Supplier Device Package | TO-247N |
| Series | - |
| Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
| Power Dissipation (Max) | 103W (Tc) |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 21A (Tc) 103W (Tc) Through Hole TO-247N |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
LAPIS Semiconductor
