Part Number : | SI4166DY-T1-GE3 |
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Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET N-CH 30V 30.5A 8-SOIC |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 46976 pcs |
Datasheets | SI4166DY-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SO |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 15A, 10V |
Power Dissipation (Max) | 3W (Ta), 6.5W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4166DY-T1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 27 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2730pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 30.5A (Tc) |