Part Number : | SI4511DY-T1-E3 |
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Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET N/P-CH 20V 7.2A 8-SOIC |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4803 pcs |
Datasheets | SI4511DY-T1-E3.pdf |
Vgs(th) (Max) @ Id | 1.8V @ 250µA |
Supplier Device Package | 8-SO |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 9.6A, 10V |
Power - Max | 1.1W |
Packaging | Cut Tape (CT) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4511DY-T1-E3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | - |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | Mosfet Array N and P-Channel 20V 7.2A, 4.6A 1.1W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 7.2A, 4.6A |
Base Part Number | SI4511 |