Part Number : | SI4936BDY-T1-GE3 |
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Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET 2N-CH 30V 6.9A 8-SOIC |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 46367 pcs |
Datasheets | SI4936BDY-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Supplier Device Package | 8-SO |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 5.9A, 10V |
Power - Max | 2.8W |
Packaging | Original-Reel® |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4936BDY-T1-GE3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 6.9A |
Base Part Number | SI4936 |