Part Number : | SI4952DY-T1-GE3 |
---|---|
Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET 2N-CH 25V 8A 8-SOIC |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 5793 pcs |
Datasheets | SI4952DY-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Supplier Device Package | 8-SO |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 10V |
Power - Max | 2.8W |
Packaging | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4952DY-T1-GE3TR SI4952DYT1GE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 13V |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 25V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 8A |
Base Part Number | SI4952 |