Part Number : | SI5902BDC-T1-GE3 |
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Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET 2N-CH 30V 4A 1206-8 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 47980 pcs |
Datasheets | SI5902BDC-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Supplier Device Package | 1206-8 ChipFET™ |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 3.1A, 10V |
Power - Max | 3.12W |
Packaging | Original-Reel® |
Package / Case | 8-SMD, Flat Lead |
Other Names | SI5902BDC-T1-GE3DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 30V 4A 3.12W Surface Mount 1206-8 ChipFET™ |
Current - Continuous Drain (Id) @ 25°C | 4A |
Base Part Number | SI5902 |