Part Number : |
SI6562DQ-T1-E3 |
Manufacturer/Brand : |
Electro-Films (EFI) / Vishay |
Description : |
MOSFET N/P-CH 20V 8-TSSOP |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
4081 pcs |
Datasheets |
SI6562DQ-T1-E3.pdf |
Vgs(th) (Max) @ Id |
600mV @ 250µA (Min) |
Supplier Device Package |
8-TSSOP |
Series |
TrenchFET® |
Rds On (Max) @ Id, Vgs |
30 mOhm @ 4.5A, 4.5V |
Power - Max |
1W |
Packaging |
Cut Tape (CT) |
Package / Case |
8-TSSOP (0.173", 4.40mm Width) |
Other Names |
SI6562DQ-T1-E3CT |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 4.5V |
FET Type |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Detailed Description |
Mosfet Array N and P-Channel 20V 1W Surface Mount 8-TSSOP |
Current - Continuous Drain (Id) @ 25°C |
- |
Base Part Number |
SI6562 |