Part Number : | SI7190DP-T1-GE3 |
---|---|
Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET N-CH 250V 18.4A PPAK SO-8 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 27244 pcs |
Datasheets | SI7190DP-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8 |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 118 mOhm @ 4.4A, 10V |
Power Dissipation (Max) | 5.4W (Ta), 96W (Tc) |
Packaging | Cut Tape (CT) |
Package / Case | PowerPAK® SO-8 |
Other Names | SI7190DP-T1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 33 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2214pF @ 125V |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Drain to Source Voltage (Vdss) | 250V |
Detailed Description | N-Channel 250V 18.4A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8 |
Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |