Part Number : | SI8425DB-T1-E1 |
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Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET P-CH 20V MICROFOOT |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 151816 pcs |
Datasheets | SI8425DB-T1-E1.pdf |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Vgs (Max) | ±10V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 4-WLCSP (1.6x1.6) |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 2A, 4.5V |
Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | 4-UFBGA, WLCSP |
Other Names | SI8425DB-T1-E1TR |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 2800pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
FET Type | P-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Detailed Description | P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6) |
Current - Continuous Drain (Id) @ 25°C | - |