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SI8435DB-T1-E1

Part Number : SI8435DB-T1-E1
Manufacturer/Brand : Electro-Films (EFI) / Vishay
Description : MOSFET P-CH 20V 10A 2X2 4-MFP
RoHs Status : Lead free / RoHS Compliant
Quantity Available 5280 pcs
Datasheets SI8435DB-T1-E1.pdf
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±5V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-Microfoot
Series TrenchFET®
Rds On (Max) @ Id, Vgs 41 mOhm @ 1A, 4.5V
Power Dissipation (Max) 2.78W (Ta), 6.25W (Tc)
Packaging Tape & Reel (TR)
Package / Case 4-XFBGA, CSPBGA
Other Names SI8435DB-T1-E1TR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 5V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Drain to Source Voltage (Vdss) 20V
Detailed Description P-Channel 20V 10A (Tc) 2.78W (Ta), 6.25W (Tc) Surface Mount 4-Microfoot
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
SI8435DB-T1-E1
Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay Images are for reference only.See Product Specifications for product details.
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