| Part Number : | SI8469DB-T2-E1 |
|---|---|
| Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
| Description : | MOSFET P-CH 8V 3.6A MICRO |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 4432 pcs |
| Datasheets | SI8469DB-T2-E1.pdf |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Vgs (Max) | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 64 mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
| Packaging | Cut Tape (CT) |
| Package / Case | 4-UFBGA |
| Other Names | SI8469DB-T2-E1CT |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 4V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Drain to Source Voltage (Vdss) | 8V |
| Detailed Description | P-Channel 8V 4.6A (Ta) 780mW (Ta), 1.8W (Tc) Surface Mount |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
Electro-Films (EFI) / Vishay
