Part Number : |
SIHB22N60S-GE3 |
Manufacturer/Brand : |
Electro-Films (EFI) / Vishay |
Description : |
MOSFET N-CH 650V TO263 |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
5662 pcs |
Datasheets |
SIHB22N60S-GE3.pdf |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Vgs (Max) |
±30V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
D²PAK (TO-263) |
Series |
S |
Rds On (Max) @ Id, Vgs |
190 mOhm @ 11A, 10V |
Power Dissipation (Max) |
250W (Tc) |
Packaging |
Tape & Reel (TR) |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
2.81nF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
FET Type |
N-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Drain to Source Voltage (Vdss) |
600V |
Detailed Description |
N-Channel 600V 22A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263) |
Current - Continuous Drain (Id) @ 25°C |
22A (Tc) |