Part Number : | SIHD3N50D-GE3 |
---|---|
Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
Description : | MOSFET N-CH 500V 3A TO252 DPAK |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 86475 pcs |
Datasheets | SIHD3N50D-GE3.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252AA |
Series | - |
Rds On (Max) @ Id, Vgs | 3.2 Ohm @ 2.5A, 10V |
Power Dissipation (Max) | 69W (Tc) |
Packaging | Tube |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Other Names | SIHD3N50D-GE3CT SIHD3N50D-GE3CT-ND SIHD3N50DGE3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 500V |
Detailed Description | N-Channel 500V 3A (Tc) 69W (Tc) Surface Mount TO-252AA |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |