| Part Number : | SIHP28N65E-GE3 |
|---|---|
| Manufacturer/Brand : | Electro-Films (EFI) / Vishay |
| Description : | MOSFET N-CH 650V 29A TO220AB |
| RoHs Status : | |
| Quantity Available | 10695 pcs |
| Datasheets | SIHP28N65E-GE3.pdf |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220AB |
| Series | - |
| Rds On (Max) @ Id, Vgs | 112 mOhm @ 14A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3405pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 29A (Tc) 250W (Tc) Through Hole TO-220AB |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Electro-Films (EFI) / Vishay
