Part Number : |
SISS65DN-T1-GE3 |
Manufacturer/Brand : |
Electro-Films (EFI) / Vishay |
Description : |
MOSFET P-CHAN 30V PPAK 1212-8S |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
88354 pcs |
Datasheets |
SISS65DN-T1-GE3.pdf |
Vgs(th) (Max) @ Id |
2.3V @ 250µA |
Vgs (Max) |
±20V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
PowerPAK® 1212-8S |
Series |
TrenchFET® Gen III |
Rds On (Max) @ Id, Vgs |
4.6 mOhm @ 15A, 10V |
Power Dissipation (Max) |
5.1W (Ta), 65.8W (Tc) |
Packaging |
Cut Tape (CT) |
Package / Case |
PowerPAK® 1212-8S |
Other Names |
SISS65DN-T1-GE3CT |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
32 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
4930pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
138nC @ 10V |
FET Type |
P-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Drain to Source Voltage (Vdss) |
30V |
Detailed Description |
P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S |
Current - Continuous Drain (Id) @ 25°C |
25.9A (Ta), 94A (Tc) |