Part Number : |
STH80N10F7-2 |
Manufacturer/Brand : |
STMicroelectronics |
Description : |
MOSFET N-CH 100V 80A H2PAK-2 |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
28923 pcs |
Datasheets |
STH80N10F7-2.pdf |
Vgs(th) (Max) @ Id |
4.5V @ 250µA |
Vgs (Max) |
±20V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
H2Pak-2 |
Series |
DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs |
9.5 mOhm @ 40A, 10V |
Power Dissipation (Max) |
110W (Tc) |
Packaging |
Tape & Reel (TR) |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names |
497-14980-2 |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
38 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
3100pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
45nC @ 10V |
FET Type |
N-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Drain to Source Voltage (Vdss) |
100V |
Detailed Description |
N-Channel 100V 80A (Tc) 110W (Tc) Surface Mount H2Pak-2 |
Current - Continuous Drain (Id) @ 25°C |
80A (Tc) |