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STI11NM60ND

Part Number : STI11NM60ND
Manufacturer/Brand : STMicroelectronics
Description : MOSFET N-CH 600V 10A I2PAK
RoHs Status : Lead free / RoHS Compliant
Quantity Available 18341 pcs
Datasheets STI11NM60ND.pdf
Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±25V
Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK
Series FDmesh™ II
Rds On (Max) @ Id, Vgs 450 mOhm @ 5A, 10V
Power Dissipation (Max) 90W (Tc)
Packaging Tube
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 10A (Tc) 90W (Tc) Through Hole I2PAK
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
STI11NM60ND
STMicroelectronics STMicroelectronics Images are for reference only.See Product Specifications for product details.
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