Part Number : | STW56N65M2-4 |
---|---|
Manufacturer/Brand : | STMicroelectronics |
Description : | MOSFET N-CH 650V I2PAKFP |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 6117 pcs |
Datasheets | STW56N65M2-4.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±25V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247-4L |
Series | MDmesh™ M2 |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 24.5A, 10V |
Power Dissipation (Max) | 358W (Tc) |
Packaging | Tube |
Package / Case | TO-247-4 |
Other Names | 497-15373-5 |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247-4L |
Current - Continuous Drain (Id) @ 25°C | 49A (Tc) |