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TC58BVG1S3HBAI6

Part Number : TC58BVG1S3HBAI6
Manufacturer/Brand : Toshiba Memory America, Inc.
Description : IC FLASH 2G PARALLEL 67VFBGA
RoHs Status : Lead free / RoHS Compliant
Quantity Available 11634 pcs
Datasheets TC58BVG1S3HBAI6.pdf
Write Cycle Time - Word, Page 25ns
Voltage - Supply 2.7 V ~ 3.6 V
Technology FLASH - NAND (SLC)
Supplier Device Package 67-VFBGA (6.5x8)
Series Benand™
Packaging Tray
Package / Case 67-VFBGA
Other Names TC58BVG1S3HBAI6JDH
TC58BVG1S3HBAI6YCL
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Memory Type Non-Volatile
Memory Size 2Gb (256M x 8)
Memory Interface Parallel
Memory Format FLASH
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description FLASH - NAND (SLC) Memory IC 2Gb (256M x 8) Parallel 25ns 67-VFBGA (6.5x8)
Access Time 25ns
TC58BVG1S3HBAI6
Toshiba Memory America, Inc. Toshiba Memory America, Inc. Images are for reference only.See Product Specifications for product details.
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