Part Number : | TC58NYG2S0HBAI6 |
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Manufacturer/Brand : | Toshiba Memory America, Inc. |
Description : | IC FLASH 4G PARALLEL 67VFBGA |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 8927 pcs |
Datasheets | TC58NYG2S0HBAI6.pdf |
Write Cycle Time - Word, Page | 25ns |
Voltage - Supply | 1.7 V ~ 1.95 V |
Technology | FLASH - NAND (SLC) |
Supplier Device Package | 67-VFBGA (6.5x8) |
Series | - |
Packaging | Tray |
Package / Case | 67-VFBGA |
Other Names | TC58NYG2S0HBAI6JDH TC58NYG2S0HBAI6YCL |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Memory Type | Non-Volatile |
Memory Size | 4Gb (512M x 8) |
Memory Interface | Parallel |
Memory Format | FLASH |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Detailed Description | FLASH - NAND (SLC) Memory IC 4Gb (512M x 8) Parallel 25ns 67-VFBGA (6.5x8) |
Access Time | 25ns |