| Part Number : | TJ30S06M3L(T6L1,NQ |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | MOSFET P-CH 60V 30A DPAK-3 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 43346 pcs |
| Datasheets | 1.TJ30S06M3L(T6L1,NQ.pdf2.TJ30S06M3L(T6L1,NQ.pdf |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | DPAK+ |
| Series | U-MOSVI |
| Rds On (Max) @ Id, Vgs | 21.8 mOhm @ 15A, 10V |
| Power Dissipation (Max) | 68W (Tc) |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Other Names | TJ30S06M3L(T6L1NQ TJ30S06M3LT6L1NQ |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Detailed Description | P-Channel 60V 30A (Ta) 68W (Tc) Surface Mount DPAK+ |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
