Part Number : | TK040N65Z,S1F |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | PB-F POWER MOSFET TRANSISTOR TO- |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4456 pcs |
Datasheets | TK040N65Z,S1F.pdf |
Vgs(th) (Max) @ Id | 4V @ 2.85mA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247 |
Series | - |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 28.5A, 10V |
Power Dissipation (Max) | 360W (Tc) |
Package / Case | TO-247-3 |
Other Names | TK040N65Z,S1F(S TK040N65ZS1F |
Operating Temperature | 150°C |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | Not Applicable |
Manufacturer Standard Lead Time | 24 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 6250pF @ 300V |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247 |
Current - Continuous Drain (Id) @ 25°C | 57A (Ta) |