Part Number : | TK12A60D(STA4,Q,M) |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | MOSFET N-CH 600V 12A TO-220SIS |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 24980 pcs |
Datasheets | 1.TK12A60D(STA4,Q,M).pdf2.TK12A60D(STA4,Q,M).pdf |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220SIS |
Series | π-MOSVII |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V |
Power Dissipation (Max) | 45W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 Full Pack |
Other Names | TK12A60D(STA4QM) TK12A60DSTA4QM |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 12A (Ta) 45W (Tc) Through Hole TO-220SIS |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |