| Part Number : | TK22E10N1,S1X |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | MOSFET N CH 100V 52A TO220 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 54650 pcs |
| Datasheets | TK22E10N1,S1X.pdf |
| Vgs(th) (Max) @ Id | 4V @ 300µA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220 |
| Series | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
| Power Dissipation (Max) | 72W (Tc) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Other Names | TK22E10N1,S1X(S TK22E10N1S1X |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Detailed Description | N-Channel 100V 52A (Tc) 72W (Tc) Through Hole TO-220 |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
Toshiba Semiconductor and Storage
