| Part Number : | 2SK3564(STA4,Q,M) |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | MOSFET N-CH 900V 3A TO-220SIS |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 45265 pcs |
| Datasheets | 1.2SK3564(STA4,Q,M).pdf2.2SK3564(STA4,Q,M).pdf |
| Voltage - Test | 700pF @ 25V |
| Voltage - Breakdown | TO-220SIS |
| Vgs(th) (Max) @ Id | 4.3 Ohm @ 1.5A, 10V |
| Vgs (Max) | 10V |
| Technology | MOSFET (Metal Oxide) |
| Series | π-MOSIV |
| RoHS Status | Tube |
| Rds On (Max) @ Id, Vgs | 3A (Ta) |
| Polarization | TO-220-3 Full Pack |
| Other Names | 2SK3564(Q) 2SK3564(STA4,Q) 2SK3564(STA4Q) 2SK3564(STA4Q)-ND 2SK3564(STA4QM) 2SK3564Q 2SK3564Q-ND 2SK3564STA4QM |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | 2SK3564(STA4,Q,M) |
| Input Capacitance (Ciss) (Max) @ Vds | 17nC @ 10V |
| IGBT Type | ±30V |
| Gate Charge (Qg) (Max) @ Vgs | 4V @ 1mA |
| FET Feature | N-Channel |
| Expanded Description | N-Channel 900V 3A (Ta) 40W (Tc) Through Hole TO-220SIS |
| Drain to Source Voltage (Vdss) | - |
| Description | MOSFET N-CH 900V 3A TO-220SIS |
| Current - Continuous Drain (Id) @ 25°C | 900V |
| Capacitance Ratio | 40W (Tc) |
Toshiba Semiconductor and Storage
