Part Number : | 2SK3565(Q,M) |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | MOSFET N-CH 900V 5A TO-220SIS |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 4923 pcs |
Datasheets | 1.2SK3565(Q,M).pdf2.2SK3565(Q,M).pdf |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220SIS |
Series | π-MOSIV |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 3A, 10V |
Power Dissipation (Max) | 45W (Tc) |
Packaging | Tube |
Package / Case | TO-220-3 Full Pack |
Other Names | 2SK3565(Q) 2SK3565(Q)-ND 2SK3565Q 2SK3565Q-ND 2SK3565QM |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 900V |
Detailed Description | N-Channel 900V 5A (Ta) 45W (Tc) Through Hole TO-220SIS |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |