Part Number : |
AOW10T60P |
Manufacturer/Brand : |
Alpha and Omega Semiconductor, Inc. |
Description : |
MOSFET N-CH 600V 10A 5DFB |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
5765 pcs |
Datasheets |
1.AOW10T60P.pdf2.AOW10T60P.pdf |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Vgs (Max) |
±30V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
TO-262 |
Series |
- |
Rds On (Max) @ Id, Vgs |
700 mOhm @ 5A, 10V |
Power Dissipation (Max) |
208W (Tc) |
Packaging |
Tube |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names |
785-1654-5 |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
1595pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
FET Type |
N-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Drain to Source Voltage (Vdss) |
600V |
Detailed Description |
N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25°C |
10A (Tc) |