Part Number : | AOW11S65 |
---|---|
Manufacturer/Brand : | Alpha and Omega Semiconductor, Inc. |
Description : | MOSFET N-CH 650V 11A TO262 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 30313 pcs |
Datasheets | 1.AOW11S65.pdf2.AOW11S65.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-262 |
Series | aMOS™ |
Rds On (Max) @ Id, Vgs | 399 mOhm @ 5.5A, 10V |
Power Dissipation (Max) | 198W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Other Names | 785-1524-5 AOW11S65-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 646pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650V |
Detailed Description | N-Channel 650V 11A (Tc) 198W (Tc) Through Hole TO-262 |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |