Part Number : | DMG4N60SJ3 |
---|---|
Manufacturer/Brand : | Diodes Incorporated |
Description : | MOSFET NCH 600V 3A TO251 |
RoHs Status : | Contains lead / RoHS Compliant |
Quantity Available | 56705 pcs |
Datasheets | DMG4N60SJ3.pdf |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-251 |
Series | - |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 2A, 10V |
Power Dissipation (Max) | 41W (Tc) |
Packaging | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 30 Weeks |
Lead Free Status / RoHS Status | Contains lead / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 3A (Tc) 41W (Tc) Through Hole TO-251 |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |