| Part Number : | DMG4N65CT |
|---|---|
| Manufacturer/Brand : | Diodes Incorporated |
| Description : | MOSFET N CH 650V 4A TO220-3 |
| RoHs Status : | Contains lead / RoHS Compliant |
| Quantity Available | 61253 pcs |
| Datasheets | DMG4N65CT.pdf |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-220-3 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 2A, 10V |
| Power Dissipation (Max) | 2.19W (Ta) |
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Other Names | DMG4N65CTDI |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 16 Weeks |
| Lead Free Status / RoHS Status | Contains lead / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 13.5nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Detailed Description | N-Channel 650V 4A (Tc) 2.19W (Ta) Through Hole TO-220-3 |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
