Part Number : | EPC8010 |
---|---|
Manufacturer/Brand : | EPC |
Description : | TRANS GAN 100V 2.7A BUMPED DIE |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 29682 pcs |
Datasheets | 1.EPC8010.pdf2.EPC8010.pdf |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | +6V, -4V |
Technology | GaNFET (Gallium Nitride) |
Supplier Device Package | Die |
Series | eGaN® |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 500mA, 5V |
Power Dissipation (Max) | - |
Packaging | Cut Tape (CT) |
Package / Case | Die |
Other Names | 917-1086-1 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 12 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 0.48nC @ 5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Drain to Source Voltage (Vdss) | 100V |
Detailed Description | N-Channel 100V 2.7A (Ta) Surface Mount Die |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |