| Part Number : | EPC8010ENGR |
|---|---|
| Manufacturer/Brand : | EPC |
| Description : | TRANS GAN 100V 2.7A BUMPED DIE |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 1834 pcs |
| Datasheets | EPC8010ENGR.pdf |
| Voltage - Test | 55pF @ 50V |
| Voltage - Breakdown | Die |
| Vgs(th) (Max) @ Id | 160 mOhm @ 500mA, 5V |
| Technology | GaNFET (Gallium Nitride) |
| Series | eGaN® |
| RoHS Status | Tray |
| Rds On (Max) @ Id, Vgs | 2.7A (Ta) |
| Polarization | - |
| Other Names | 917-EPC8010ENGR EPC8010ENGJ |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Part Number | EPC8010ENGR |
| Input Capacitance (Ciss) (Max) @ Vds | 0.48nC @ 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5V @ 250µA |
| FET Feature | N-Channel |
| Expanded Description | N-Channel 100V 2.7A (Ta) Surface Mount Die |
| Drain to Source Voltage (Vdss) | - |
| Description | TRANS GAN 100V 2.7A BUMPED DIE |
| Current - Continuous Drain (Id) @ 25°C | 100V |
| Capacitance Ratio | - |
EPC
