Part Number : | FJV3113RMTF |
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Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | TRANS PREBIAS NPN 200MW SOT23-3 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 659466 pcs |
Datasheets | 1.FJV3113RMTF.pdf2.FJV3113RMTF.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Transistor Type | NPN - Pre-Biased |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 200mW |
Packaging | Original-Reel® |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Other Names | FJV3113RMTFDKR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 2 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-23-3 (TO-236) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | FJV3113 |