| Part Number : | FJV4106RMTF |
|---|---|
| Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
| Description : | TRANS PREBIAS PNP 200MW SOT23-3 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 4171 pcs |
| Datasheets | 1.FJV4106RMTF.pdf2.FJV4106RMTF.pdf |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Transistor Type | PNP - Pre-Biased |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Series | - |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Resistor - Base (R1) | 10 kOhms |
| Power - Max | 200mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 200MHz |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 100mA |
