Part Number : | HN1B04FE-GR,LF |
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Manufacturer/Brand : | Toshiba Semiconductor and Storage |
Description : | TRANS NPN/PNP 50V 0.15A ES6 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 496245 pcs |
Datasheets | HN1B04FE-GR,LF.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Transistor Type | NPN, PNP |
Supplier Device Package | ES6 |
Series | - |
Power - Max | 100mW |
Packaging | Original-Reel® |
Package / Case | SOT-563, SOT-666 |
Other Names | HN1B04FE-GR(5LFTDKR HN1B04FE-GR(5LFTDKR-ND HN1B04FE-GRLF(TDKR HN1B04FE-GRLF(TDKR-ND HN1B04FE-GRLFDKR |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 16 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 80MHz |
Detailed Description | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 150mA |