| Part Number : | HN1B04FU-GR,LF |
|---|---|
| Manufacturer/Brand : | Toshiba Semiconductor and Storage |
| Description : | TRANS NPN/PNP 50V 0.15A US6 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 603459 pcs |
| Datasheets | HN1B04FU-GR,LF.pdf |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Transistor Type | NPN, PNP |
| Supplier Device Package | US6 |
| Series | - |
| Power - Max | 200mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Other Names | HN1B04FU-GR(L,F,T) HN1B04FU-GR(LFT)TR HN1B04FU-GR(LFT)TR-ND HN1B04FU-GR,LF(B HN1B04FU-GR,LF(T HN1B04FU-GRLF HN1B04FU-GRLF-ND HN1B04FU-GRLFT HN1B04FU-GRLFTR |
| Operating Temperature | 125°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 12 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Frequency - Transition | 150MHz |
| Detailed Description | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW Surface Mount US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 150mA |
Toshiba Semiconductor and Storage
