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IRLD110

Part Number : IRLD110
Manufacturer/Brand : Electro-Films (EFI) / Vishay
Description : MOSFET N-CH 100V 1A 4-DIP
RoHs Status : Contains lead / RoHS non-compliant
Quantity Available 4389 pcs
Datasheets IRLD110.pdf
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±10V
Technology MOSFET (Metal Oxide)
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Series -
Rds On (Max) @ Id, Vgs 540 mOhm @ 600mA, 5V
Power Dissipation (Max) 1.3W (Ta)
Packaging Tube
Package / Case 4-DIP (0.300", 7.62mm)
Other Names *IRLD110
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
IRLD110
Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay Images are for reference only.See Product Specifications for product details.
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