| Part Number : |
IRLD110PBF |
| Manufacturer/Brand : |
Electro-Films (EFI) / Vishay |
| Description : |
MOSFET N-CH 100V 1A 4-DIP |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
69607 pcs |
| Datasheets |
IRLD110PBF.pdf |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Vgs (Max) |
±10V |
| Technology |
MOSFET (Metal Oxide) |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Series |
- |
| Rds On (Max) @ Id, Vgs |
540 mOhm @ 600mA, 5V |
| Power Dissipation (Max) |
1.3W (Ta) |
| Packaging |
Tube |
| Package / Case |
4-DIP (0.300", 7.62mm) |
| Other Names |
*IRLD110PBF |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Manufacturer Standard Lead Time |
16 Weeks |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs |
6.1nC @ 5V |
| FET Type |
N-Channel |
| FET Feature |
- |
| Drive Voltage (Max Rds On, Min Rds On) |
4V, 5V |
| Drain to Source Voltage (Vdss) |
100V |
| Detailed Description |
N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP |
| Current - Continuous Drain (Id) @ 25°C |
1A (Ta) |
Electro-Films (EFI) / Vishay
