Part Number : | NSBA114TDP6T5G |
---|---|
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Description : | TRANS 2PNP PREBIAS 0.408W SOT963 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 404582 pcs |
Datasheets | NSBA114TDP6T5G.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Supplier Device Package | SOT-963 |
Series | - |
Resistor - Emitter Base (R2) | - |
Resistor - Base (R1) | 10 kOhms |
Power - Max | 408mW |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-963 |
Other Names | NSBA114TDP6T5G-ND NSBA114TDP6T5GOSTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 11 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | NSBA1* |