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R6009ENJTL

Part Number : R6009ENJTL
Manufacturer/Brand : LAPIS Semiconductor
Description : MOSFET N-CH 600V 9A LPT
RoHs Status : Lead free / RoHS Compliant
Quantity Available 22539 pcs
Datasheets 1.R6009ENJTL.pdf2.R6009ENJTL.pdf
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package LPTS (D2PAK)
Series -
Rds On (Max) @ Id, Vgs 535 mOhm @ 2.8A, 10V
Power Dissipation (Max) 40W (Tc)
Packaging Cut Tape (CT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names R6009ENJTLCT
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 17 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
R6009ENJTL
LAPIS Semiconductor LAPIS Semiconductor Images are for reference only.See Product Specifications for product details.
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