Part Number : |
R6009ENJTL |
Manufacturer/Brand : |
LAPIS Semiconductor |
Description : |
MOSFET N-CH 600V 9A LPT |
RoHs Status : |
Lead free / RoHS Compliant |
Quantity Available |
22539 pcs |
Datasheets |
1.R6009ENJTL.pdf2.R6009ENJTL.pdf |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Vgs (Max) |
±20V |
Technology |
MOSFET (Metal Oxide) |
Supplier Device Package |
LPTS (D2PAK) |
Series |
- |
Rds On (Max) @ Id, Vgs |
535 mOhm @ 2.8A, 10V |
Power Dissipation (Max) |
40W (Tc) |
Packaging |
Cut Tape (CT) |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names |
R6009ENJTLCT |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Manufacturer Standard Lead Time |
17 Weeks |
Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds |
430pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
FET Type |
N-Channel |
FET Feature |
- |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Drain to Source Voltage (Vdss) |
600V |
Detailed Description |
N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK) |
Current - Continuous Drain (Id) @ 25°C |
9A (Tc) |