Part Number : | R6009ENX |
---|---|
Manufacturer/Brand : | LAPIS Semiconductor |
Description : | MOSFET N-CH 600V 9A TO220 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 21673 pcs |
Datasheets | R6009ENX.pdf |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220FM |
Series | - |
Rds On (Max) @ Id, Vgs | 535 mOhm @ 2.8A, 10V |
Power Dissipation (Max) | 40W (Tc) |
Packaging | Bulk |
Package / Case | TO-220-3 Full Pack |
Other Names | R6009ENXCT R6009ENXCT-ND |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 17 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 9A (Tc) 40W (Tc) Through Hole TO-220FM |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |