| Part Number : | R6035ENZ1C9 |
|---|---|
| Manufacturer/Brand : | LAPIS Semiconductor |
| Description : | MOSFET N-CH 600V 35A TO247 |
| RoHs Status : | Lead free / RoHS Compliant |
| Quantity Available | 11112 pcs |
| Datasheets | R6035ENZ1C9.pdf |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | TO-247 |
| Series | - |
| Rds On (Max) @ Id, Vgs | 102 mOhm @ 18.1A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Manufacturer Standard Lead Time | 17 Weeks |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 2720pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| FET Type | N-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 35A (Tc) 120W (Tc) Through Hole TO-247 |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
LAPIS Semiconductor
