Part Number : | R6035KNZ1C9 |
---|---|
Manufacturer/Brand : | LAPIS Semiconductor |
Description : | MOSFET N-CHANNEL 600V 35A TO247 |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 11300 pcs |
Datasheets | R6035KNZ1C9.pdf |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-247 |
Series | - |
Rds On (Max) @ Id, Vgs | 102 mOhm @ 18.1A, 10V |
Power Dissipation (Max) | 379W (Tc) |
Packaging | Tape & Reel (TR) |
Package / Case | TO-247-3 |
Other Names | R6035KNZ1C9TR R6035KNZ1C9TR-ND |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 17 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 35A (Tc) 379W (Tc) Through Hole TO-247 |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |