Part Number : | RGT00TS65DGC11 |
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Manufacturer/Brand : | LAPIS Semiconductor |
Description : | 650V 50A FIELD STOP TRENCH IGBT |
RoHs Status : | Lead free / RoHS Compliant |
Quantity Available | 15581 pcs |
Datasheets | 1.RGT00TS65DGC11.pdf2.RGT00TS65DGC11.pdf |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
Test Condition | 400V, 50A, 10 Ohm, 15V |
Td (on/off) @ 25°C | 42ns/137ns |
Switching Energy | - |
Supplier Device Package | TO-247N |
Series | - |
Reverse Recovery Time (trr) | 54ns |
Power - Max | 277W |
Package / Case | TO-247-3 |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 10 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Type | Standard |
IGBT Type | Trench Field Stop |
Gate Charge | 94nC |
Detailed Description | IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N |
Current - Collector Pulsed (Icm) | 150A |
Current - Collector (Ic) (Max) | 85A |