| Part Number : |
RGT30NS65DGTL |
| Manufacturer/Brand : |
LAPIS Semiconductor |
| Description : |
IGBT 650V 30A 133W TO-263S |
| RoHs Status : |
Lead free / RoHS Compliant |
| Quantity Available |
35491 pcs |
| Datasheets |
RGT30NS65DGTL.pdf |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| Test Condition |
400V, 15A, 10 Ohm, 15V |
| Td (on/off) @ 25°C |
18ns/64ns |
| Switching Energy |
- |
| Supplier Device Package |
LPDS (TO-263S) |
| Series |
- |
| Reverse Recovery Time (trr) |
55ns |
| Power - Max |
133W |
| Packaging |
Tape & Reel (TR) |
| Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names |
RGT30NS65DGTLTR |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Manufacturer Standard Lead Time |
15 Weeks |
| Lead Free Status / RoHS Status |
Lead free / RoHS Compliant |
| Input Type |
Standard |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
32nC |
| Detailed Description |
IGBT Trench Field Stop 650V 30A 133W Surface Mount LPDS (TO-263S) |
| Current - Collector Pulsed (Icm) |
45A |
| Current - Collector (Ic) (Max) |
30A |
LAPIS Semiconductor
